DocumentCode :
2129555
Title :
Bismuth-based semiconductors for mid-infrared photonic devices
Author :
Sweeney, S.J. ; Marko, I.P. ; Jin, S.R. ; Hild, K. ; Batool, Z.
Author_Institution :
Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey, GU2 7XH, UK
fYear :
2015
fDate :
13-15 July 2015
Firstpage :
181
Lastpage :
182
Abstract :
Owing to the versatile band-structure made possible through the introduction of bismuth in III-V systems, we discuss the potential to produce efficient emitters and detectors in the mid-infrared based upon conventional GaAs and InP substrates.
Keywords :
Bismuth; Gallium arsenide; Indium phosphide; Photonic band gap; Strain; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
Type :
conf
DOI :
10.1109/PHOSST.2015.7248257
Filename :
7248257
Link To Document :
بازگشت