DocumentCode :
2129642
Title :
High-reflection Si/SiO2 Bragg reflector via membrane transfer printing
Author :
Cho, Minkyu ; Seo, Jung-Hun ; Lee, Jaeseong ; Zhao, Deyin ; Zhou, Weidong ; Ma, Zhenqiang
Author_Institution :
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53705 USA
fYear :
2015
fDate :
13-15 July 2015
Firstpage :
193
Lastpage :
195
Abstract :
High reflection Si/SiO2 quarter-wavelength Distributed Bragg Reflector (DBR) is reported. The structure is composed of alternate single crystal Si and thermally-grown SiO2. Si Nanomembrane (Si NM) transfer and subsequent thermal oxidation achieves high reflection throughout the broad IR spectrum.
Keywords :
Crystals; Distributed Bragg reflectors; Oxidation; Reflection; Semiconductor device measurement; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
Type :
conf
DOI :
10.1109/PHOSST.2015.7248261
Filename :
7248261
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2129642
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