• DocumentCode
    2129642
  • Title

    High-reflection Si/SiO2 Bragg reflector via membrane transfer printing

  • Author

    Cho, Minkyu ; Seo, Jung-Hun ; Lee, Jaeseong ; Zhao, Deyin ; Zhou, Weidong ; Ma, Zhenqiang

  • Author_Institution
    Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53705 USA
  • fYear
    2015
  • fDate
    13-15 July 2015
  • Firstpage
    193
  • Lastpage
    195
  • Abstract
    High reflection Si/SiO2 quarter-wavelength Distributed Bragg Reflector (DBR) is reported. The structure is composed of alternate single crystal Si and thermally-grown SiO2. Si Nanomembrane (Si NM) transfer and subsequent thermal oxidation achieves high reflection throughout the broad IR spectrum.
  • Keywords
    Crystals; Distributed Bragg reflectors; Oxidation; Reflection; Semiconductor device measurement; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Summer Topicals Meeting Series (SUM), 2015
  • Conference_Location
    Nassau, Bahamas
  • Print_ISBN
    978-1-4799-7467-2
  • Type

    conf

  • DOI
    10.1109/PHOSST.2015.7248261
  • Filename
    7248261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2129642