Title :
GeSn mid-IR materials and devices for 3D photonic integration
Author :
Liu, Jifeng ; Li, Haofeng ; Wang, Xiaoxin
Author_Institution :
Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
Abstract :
We present direct gap, pseudo-single-crystal GeSn on amorphous dielectric layers and flexible substrates for MIR active integrated photonics. The high transient gain and the strain engineering via flexible substrate deformation indicate promising device applications.
Keywords :
Annealing; Crystallization; Photonic band gap; Photonics; Substrates; Tensile strain; Tin;
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
DOI :
10.1109/PHOSST.2015.7248262
