DocumentCode
2129720
Title
Si-based GeSn edge-emitting LEDs with Sn compositions up to 8%
Author
Du, Wei ; Ghetmiri, Seyed A. ; Zhou, Yiyin ; Mosleh, Abooz ; Naseem, Hameed ; Yu, Shui-Qing ; Tolle, John ; Margetis, Joe ; Soref, Richard A. ; Sun, Greg ; Li, Boahua
Author_Institution
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
fYear
2015
fDate
13-15 July 2015
Firstpage
191
Lastpage
192
Abstract
Characterization of GeSn edge-emitting LEDs has been conducted with Sn compositions up to 8%. Room temperature electroluminescence spectra and emission power were measured. A peak power of 50 mW was achieved with an 8%-Sn device.
Keywords
Light emitting diodes; Photonic band gap; Silicon; Sun; Temperature measurement; Tin; Edge emitting; GeSn LED; Si photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Summer Topicals Meeting Series (SUM), 2015
Conference_Location
Nassau, Bahamas
Print_ISBN
978-1-4799-7467-2
Type
conf
DOI
10.1109/PHOSST.2015.7248263
Filename
7248263
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