DocumentCode
2129805
Title
InP-based microwave/millimeterwave technology for military and commercial markets
Author
Greiling, Paul T.
Author_Institution
Hughes Research Laboratory, 3011 Malibu Canyon Road, Malibu, CA 90265.
Volume
2
fYear
1996
fDate
6-13 Sept. 1996
Firstpage
743
Lastpage
747
Abstract
InP-based device technology has superior microwave/millimeterwave performance for low noise, high efficiency power and high speed digital/analog applications. Presently InP-based devices are being utilized in communication satellites. In the future as military and commercial applications require wider bandwidths and higher operating frequencies, InP-based technology will be key to the deployment of these systems.
Keywords
Bandwidth; Frequency; Gain; HEMTs; Heterojunction bipolar transistors; Integrated circuit noise; Microwave devices; Microwave technology; Millimeter wave technology; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1996. 26th European
Conference_Location
Prague, Czech Republic
Type
conf
DOI
10.1109/EUMA.1996.337686
Filename
4138735
Link To Document