DocumentCode :
2129805
Title :
InP-based microwave/millimeterwave technology for military and commercial markets
Author :
Greiling, Paul T.
Author_Institution :
Hughes Research Laboratory, 3011 Malibu Canyon Road, Malibu, CA 90265.
Volume :
2
fYear :
1996
fDate :
6-13 Sept. 1996
Firstpage :
743
Lastpage :
747
Abstract :
InP-based device technology has superior microwave/millimeterwave performance for low noise, high efficiency power and high speed digital/analog applications. Presently InP-based devices are being utilized in communication satellites. In the future as military and commercial applications require wider bandwidths and higher operating frequencies, InP-based technology will be key to the deployment of these systems.
Keywords :
Bandwidth; Frequency; Gain; HEMTs; Heterojunction bipolar transistors; Integrated circuit noise; Microwave devices; Microwave technology; Millimeter wave technology; Semiconductor device noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
Type :
conf
DOI :
10.1109/EUMA.1996.337686
Filename :
4138735
Link To Document :
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