DocumentCode :
2130123
Title :
High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications
Author :
Kikkawa, T. ; Makiyama, K. ; Imanishi, K. ; Ohki, T. ; Kanamura, M. ; Okamoto, N. ; Hara, N. ; Joshin, K.
fYear :
2007
fDate :
14-17 Oct. 2007
Firstpage :
1
Lastpage :
4
Keywords :
Aluminum gallium nitride; Electrodes; Frequency; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Millimeter wave technology; Millimeter wave transistors; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location :
Portland, OR, USA
Print_ISBN :
978-1-4244-1022-4
Type :
conf
DOI :
10.1109/CSICS07.2007.10
Filename :
4384390
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2130123
