DocumentCode
2130123
Title
High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications
Author
Kikkawa, T. ; Makiyama, K. ; Imanishi, K. ; Ohki, T. ; Kanamura, M. ; Okamoto, N. ; Hara, N. ; Joshin, K.
fYear
2007
fDate
14-17 Oct. 2007
Firstpage
1
Lastpage
4
Keywords
Aluminum gallium nitride; Electrodes; Frequency; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Millimeter wave technology; Millimeter wave transistors; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location
Portland, OR, USA
Print_ISBN
978-1-4244-1022-4
Type
conf
DOI
10.1109/CSICS07.2007.10
Filename
4384390
Link To Document