Measurement and analysis on characteristics of transmission and polarization for 12ML 65nm CMOS

We have measured and analyzed on light transmission characteristics and polarization through multiple-layer interconnection in the advanced CMOS processes. Measurement results of wavelength dependent light transmission characteristics in 65 nm CMOS with 12 metal layers with various substructures such like barrier layers show good agreement with calculation results by transfer matrix. We have also measured polarization characteristics through wire grid in metal layers in the same 65 nm CMOS according to wavelength, wire-grid pitch and wire width. We have measured polarization-inversion phenomena, which is well explained by the simple optical model for wire grid polarizations.