• DocumentCode
    2130170
  • Title

    High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si

  • Author

    Park, Chris ; Edwards, Andrew ; Rajagopal, Pradeep ; Johnson, Wayne ; Singhal, Sameer ; Hanson, Allen ; Martin, Quinn ; Piner, Edwin L. ; Linthicum, Kevin J. ; Kizilyalli, Isik C.

  • fYear
    2007
  • fDate
    14-17 Oct. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Keywords
    Aluminum gallium nitride; Costs; Gallium arsenide; Gallium nitride; HEMTs; Pulse amplifiers; Radio frequency; Silicon; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
  • Conference_Location
    Portland, OR, USA
  • Print_ISBN
    978-1-4244-1022-4
  • Type

    conf

  • DOI
    10.1109/CSICS07.2007.11
  • Filename
    4384391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2130170