Recent Advances in GaN-on-SiC HEMT Reliability and Microwave Performance within the DARPA WBGS-RF Program

Author

Rosker, Mark J.

Author_Institution

Defense Adv. Res. Projects Agency, Arlington

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; wide band gap semiconductors; DARPA WBGS-RF program; GaN-SiC; GaN-on-SiC HEMT ReliaReliabilitybility; microwave performance; Gallium compounds; Gallium nitride; HEMTs; III-V semiconductor materials; Microwave devices; Radio frequency; Semiconductor device manufacture; Silicon carbide; Substrates; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.13

Filename

4384393