Title :
Recent Advances in GaN-on-SiC HEMT Reliability and Microwave Performance within the DARPA WBGS-RF Program
Author_Institution :
Defense Adv. Res. Projects Agency, Arlington
Abstract :
The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; wide band gap semiconductors; DARPA WBGS-RF program; GaN-SiC; GaN-on-SiC HEMT ReliaReliabilitybility; microwave performance; Gallium compounds; Gallium nitride; HEMTs; III-V semiconductor materials; Microwave devices; Radio frequency; Semiconductor device manufacture; Silicon carbide; Substrates; Wide band gap semiconductors;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-1022-4
DOI :
10.1109/CSICS07.2007.13
