Title :
Integrated silicon photodetector for lab-on-chip sensor platform
Author :
Samusenko, A. ; Hamedan, V.J. ; Pucker, G. ; Ghulinyan, M. ; Ficorella, F. ; Guider, R. ; Gandolfi, D. ; Pavesi, L.
Author_Institution :
Centre for Mater. & Microsyst, Fondazione Bruno Kessler, Povo, Italy
Abstract :
In this paper we demonstrate design, fabrication and characterization of both amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) photoconductive detectors integrated on top of passive silicon oxynitride (SiON) circuit. The devices show the best responsivity of 0.5mA/W and 0.8A/W (under broadband illumination in the UV-VIS-NIR spectral region) and dark current of less than 0.23nA and 270nA at the bias of 5V for amorphous and polycrystalline silicon, respectively. The applicability of devices for lab-on-chip biosensor operating at 850nm has been proved by demonstration the ability of the detector to reproduce the sensor spectral response.
Keywords :
amorphous semiconductors; biosensors; dark conductivity; elemental semiconductors; infrared spectra; integrated optoelectronics; lab-on-a-chip; photodetectors; silicon; silicon compounds; ultraviolet spectra; visible spectra; Si; SiON; UV-VIS-NIR spectral region; amorphous silicon photoconductive detectors; broadband illumination; dark current; integrated silicon photodetector; lab-on-chip sensor platform; passive silicon oxynitride circuit; polycrystalline silicon photoconductive detectors; responsivity; voltage 5 V; wavelength 850 nm; Detectors; Optical detectors; Optical resonators; Optical waveguides; Photodetectors; Photonics; Silicon; Silicon; integrated photonic circuit; near-infrared; optoelectronics; photoconductive detector;
Conference_Titel :
AISEM Annual Conference, 2015 XVIII
Conference_Location :
Trento
DOI :
10.1109/AISEM.2015.7066813
