A 250W S-Band GaN HEMT Amplifier

Author

Krishnamurthy, K. ; Poulton, M.J. ; Martin, J. ; Vetury, R. ; Brown, J.D. ; Shealy, J.B.

Author_Institution

RF Micro Devices Inc., Charlotte

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10% duty cycle and 20mus pulse width. To our knowledge this is one of the widest bandwidth reported at this power level and frequency. These amplifiers are targeted for wideband digital cellular infrastructure; satellite communication, avionics and ISM band applications.

Keywords

III-V semiconductors; UHF integrated circuits; UHF power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; wideband amplifiers; AlGaN-GaN; HEMT power amplifier; S-band GaN HEMT amplifier; broadband amplifiers; frequency 2.1 GHz to 2.5 GHz; high-electron-mobility transistors; power 250 W; wideband digital cellular infrastructure; Aluminum gallium nitride; Bandwidth; Gallium nitride; HEMTs; Operational amplifiers; Packaging; Power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.14

Filename

4384394