250W HVHBT Doherty with 57% WCDMA Efficiency Linearized to -55dBc for 2c11 6.5dB PAR

Author

Steinbeiser, Craig ; Landon, Thomas ; Suckling, Charles

Author_Institution

TriQuint Semicond., Richardson

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

A 2-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using High-Voltage HBT (HVHBT) GaAs technology biased at 28 V on the Collector. Greater than 57% collector efficiency at 50W (47dBm) average output power has been demonstrated while achieving -55dBc linearized ACPR at 5 MHz offset using a 2-carrier-side-by-side WCDMA input signal with 6.5dB peak to average ratio measured at .01% probability on the CCDF. At this condition, the measured overall power-added efficiency is 53%. The HVHBT Doherty exhibits 200W (53dBm) PldBat 70% efficiency with 57% efficiency at 6dB output back-off (OBO) from PldB showing a 25 percentage point improvement over class AB operation.

Keywords

code division multiple access; heterojunction bipolar transistors; power amplifiers; radiofrequency amplifiers; 2-way symmetrical Doherty amplifier; GaAs; HVHBT Doherty; PAR; WCDMA; collector; efficiency 57 percent; efficiency 70 percent; high-voltage HBT; output back-off; power 250 W; power 50 W; voltage 28 V; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.16

Filename

4384396