Characterization of Single-Photon Avalanche Diode arrays in 150nm CMOS technology

Author

Hesong Xu ; Braga, Leo H. C. ; Stoppa, David ; Pancheri, Lucio

Author_Institution

IRIS - Integrated Radiat. & Image Sensors, Fondazione Bruno Kessler, Trento, Italy

fYear

2015

fDate

3-5 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

In this paper, a summary of characterization results from a SPAD test chip is reported. The chip includes test arrays based on two different SPAD structures, having p+/n-well and p-well/n-iso active area. Devices with different shapes and sizes as well as arrays dedicated to cross-talk extraction are present. Measurement results show that SPADs of the second type have a slightly lower Dark Count Rate. The peak Photon Detection Probability (PDP) is larger than 20% at 3V excess bias voltage for both structures. The average cross-talk probability between neighbors in SPAD arrays with 15.6μm pitch and 40% fill factor is less than 0.6% at 3V excess bias voltage for the first structure, while it is around 2.3% for the second one.

Keywords

CMOS integrated circuits; avalanche diodes; crosstalk; probability; semiconductor device testing; CMOS technology; PDP; SPAD structures; SPAD test chip; bias voltage; cross-talk extraction; cross-talk probability; dark count rate; fill factor; photon detection probability; single-photon avalanche diode arrays; size 150 nm; test arrays; voltage 3 V; CMOS integrated circuits; CMOS technology; Crosstalk; ISO; Optical crosstalk; Photonics; Shape; Cross-talk; Dark Count Rate (DCR); Photon Detection Probability (PDP); SPADs; Single-Photon Avalanche Diode;

fLanguage

English

Publisher

ieee

Conference_Titel

AISEM Annual Conference, 2015 XVIII

Conference_Location

Trento

Type

conf

DOI

10.1109/AISEM.2015.7066818

Filename

7066818