Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz

Author

Deal, W.R. ; Mei, X.B. ; Radisic, V. ; Yoshida, W. ; Liu, P.H. ; Uyeda, J. ; Barsky, M. ; Gaier, T. ; Fung, A. ; Lai, R.

Author_Institution

Northrop Grumman Corp., Redondo Beach

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

In this paper, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time. The three stage amplifier uses advanced InP HEMT transistors to realize 16-dB gain at 340-GHz and > 20 dB gain at 280-GHz. The amplifier demonstrates > 100 GHz of bandwidth with gain > 10 dB. This paper demonstrates that full WR-3 waveguide band (220-325 GHz) InP HEMT amplifiers are currently possible and that current device capabilities enable operation well into the sub-millimeter wave regime.

Keywords

HEMT circuits; MMIC amplifiers; coplanar waveguides; high electron mobility transistors; indium compounds; low noise amplifiers; HEMT amplifiers; HEMT transistors; S-MMIC LNA; coplanar waveguide; frequency 220 GHz to 325 GHz; frequency 340 GHz; gain 16 dB; indium phosphide; low noise amplifier; sub-millimeter wave regime; three stage amplifier; Coplanar waveguides; Frequency; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Radiofrequency amplifiers; Submillimeter wave integrated circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.19

Filename

4384399