Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range

The noise behavior of millimeter-wave Hetero-FETs is investigated by using a rigorous physical simulator which takes into account non-stationary transport properties and quantization effects to allow better understanding of the origins of the noise fluctuations. The model is applied to determine the effects of Al composition on the 2DEG transport properties and consequently on the noise behavior of Hetero-FETs. The results are compared to those for GaAs MESFETs with 3DEG channel and possibilities to suppress the dominant noise sources at the different frequencies of operation are finally discussed.