Title :
A Compact SPDT Switch in 0.18um CMOS Process With High Linearity and Low Insertion Loss
Author :
Teshiba, Mary ; Sakamoto, Glenn ; Cisco, Terry
Author_Institution :
Raytheon Co., El Segundo
Abstract :
A compact CMOS SPDT switch fabricated in 0.18 mum BiCMOS technology has been successfully demonstrated at X-Ku-band. The fully integrated chip exhibits a low insertion loss of 1.9 dB and an isolation of 22.5 dB at 17 GHz. By reverse biasing the source/drain (S/D) diode junctions, the switch achieves a PldB of 21 dBm and TOI greater than 30 dB in a very compact structure. The small footprint, along with the performance being comparable to GaAs switches, makes the switch a very attractive, low cost building block circuit for MMIC designs.
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; field effect MMIC; field effect transistor switches; integrated circuit design; microwave switches; BiCMOS technology; MMIC designs; MOSFET switches; RF System-on-chip; RF switches; Si-Ge; X-Ku-band; compact CMOS SPDT switch; frequency 17 GHz; insertion loss; loss 1.9 dB; reverse bias condition; size 0.18 mum; source-drain diode junctions; BiCMOS integrated circuits; CMOS process; CMOS technology; Diodes; Gallium arsenide; Insertion loss; Isolation technology; Linearity; Switches; Switching circuits;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-1022-4
DOI :
10.1109/CSICS07.2007.36
