Development, iplementation and verification of a physics-based Si/SiGe HBT model for millimetre-wave non-linear circuit simulations

A physics-based large-signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs and is directly related to the parameter iin the fabrication process. Using extraction procedures for only a few parameters that iherently are difficult to predict, either due to uncertainties in the fabrication process or due to cmplex physical relations, a good agreement is found between the, model and measurements. The model has been implemented using a commercial CAD-system facilitating design of non-linear Si/SiGe HBT applications. Thus the model has been used to design and predict the behaviour of a doubler circuit operating at 55 GHz with good accuracy.