Title :
A direct extraction method of heterojunction bipolar transistors small signal equivalent circuits based on S-parameters and noise measurements
Author_Institution :
Rafael 87, P.Box. 2250, 31021, Haifa, Israel. Tel 00-9724-8794358, Fax 00-9724-8792037
Abstract :
A direct extraction method of the HBT small-signal equivalent circuit based on noise figure and s-parameters measurements is presented. The equivalent circuit includes the extrinsic base-collector capacitance and extrinsic base resistance. It is shown that the elementary equivalent circuit with a single base resistance underestimates the noise performance of the device.
Keywords :
Capacitance; Circuit noise; Electrical resistance measurement; Equivalent circuits; Heterojunction bipolar transistors; Noise figure; Noise measurement; Optimization methods; Scattering parameters; Thermal resistance;
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
DOI :
10.1109/EUMA.1996.337723
