Author :
Lin, C.H. ; Chou, Y.C. ; Lange, M.D. ; Yang, J.M. ; Nishimoto, M.Y. ; Lee, J. ; Nam, P.S. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Tsai, R.S. ; Gutierrez, A.L. ; Barsky, M.E. ; Chin, T.P. ; Wojtowicz, M. ; Lai, R. ; Oki, A.K.
Abstract :
-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n+-InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; aluminium compounds; etching; indium compounds; low noise amplifiers; GaAs; HEMT MMIC technology; InAs-Al-Sb-InAs; LNA; cap layer etching; low-noise amplifiers; phased-array applications; size 0.1 mum; size 3 inch; ultralow power dissipation; Gallium arsenide; HEMTs; Indium compounds; MMICs; Power dissipation; Radio frequency; Rough surfaces; Space technology; Surface resistance; Surface roughness;
