• DocumentCode
    2131265
  • Title

    Thermal sensor variation reduction in deep sub 100nm process technologies

  • Author

    Duarte, David E. ; Abdelmoneum, Mohamed ; Taylor, Greg

  • Author_Institution
    Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA
  • fYear
    2010
  • fDate
    1-4 Nov. 2010
  • Firstpage
    1382
  • Lastpage
    1385
  • Abstract
    As technology scales, the impact of process variation to device and circuit performance has increased significantly. The presented statistical design approach illustrates the importance of pre-silicon circuit performance characterization under random variation stress. The measured data shows that by applying sound analog layout rules, actual variation can be reduced by 30% and that compensation techniques like chopping for amplifier offset cancellation and current source mismatch reduction are effective in lowering variation further by up to 55%. The choice between the static and dynamic application of these techniques is also discussed.
  • Keywords
    constant current sources; elemental semiconductors; silicon; temperature sensors; Si; amplifier offset cancellation; compensation technique; current source mismatch reduction; pre-silicon circuit performance characterization; random variation stress; size 100 nm; sound analog layout; thermal sensor variation reduction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2010 IEEE
  • Conference_Location
    Kona, HI
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-8170-5
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2010.5690530
  • Filename
    5690530