DocumentCode
2131265
Title
Thermal sensor variation reduction in deep sub 100nm process technologies
Author
Duarte, David E. ; Abdelmoneum, Mohamed ; Taylor, Greg
Author_Institution
Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
1382
Lastpage
1385
Abstract
As technology scales, the impact of process variation to device and circuit performance has increased significantly. The presented statistical design approach illustrates the importance of pre-silicon circuit performance characterization under random variation stress. The measured data shows that by applying sound analog layout rules, actual variation can be reduced by 30% and that compensation techniques like chopping for amplifier offset cancellation and current source mismatch reduction are effective in lowering variation further by up to 55%. The choice between the static and dynamic application of these techniques is also discussed.
Keywords
constant current sources; elemental semiconductors; silicon; temperature sensors; Si; amplifier offset cancellation; compensation technique; current source mismatch reduction; pre-silicon circuit performance characterization; random variation stress; size 100 nm; sound analog layout; thermal sensor variation reduction;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5690530
Filename
5690530
Link To Document