Design and implementation of high resolution, high linearity temperature sensor in CMOS process

Author

Felini, C. ; Merenda, M. ; Della Corte, F.G.

Author_Institution

DIEES, Univ. Mediterranea of Reggio Calabria, Reggio Calabria, Italy

fYear

2015

fDate

3-5 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

An high-resolution CMOS temperature sensor with high linearity in the range from 20°C to 90°C is presented. The circuit uses substrate bipolars as temperature transducers. The temperature sensor consists of two building blocks: a Proportional To Absolute Temperature (PTAT) voltage generator and a differential amplifier. The second block is necessary to obtain reasonable voltage level that can be either read with a simple setup using it as analog input for an ADC. The simulation predictions are confirmed with experimental data resulting from the IC fabricated in a standard 0.35μm CMOS technology.

Keywords

CMOS integrated circuits; analogue-digital conversion; bipolar integrated circuits; differential amplifiers; temperature sensors; transducers; ADC; IC fabrication; PTAT voltage generator; differential amplifier; high-resolution CMOS temperature sensor; proportional to absolute temperature voltage generator; size 0.35 mum; substrate bipolar; temperature 20 degC to 90 degC; temperature transducer; CMOS integrated circuits; Linearity; Sensitivity; Temperature distribution; Temperature sensors; Transistors; CMOS; PTAT; Sensor; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

AISEM Annual Conference, 2015 XVIII

Conference_Location

Trento

Type

conf

DOI

10.1109/AISEM.2015.7066859

Filename

7066859