Title :
MEMS techniques for the parallel fabrication of Chip Scale Atomic Devices
Author :
Perez, Maximillian A. ; Knappe, Svenja ; Kitching, John
Author_Institution :
Atomic Devices & Instrum. Group, Nat. Inst. of Stand. & Technol. (NIST), Boulder, CO, USA
Abstract :
The Atomic Devices and Instrumentation Group at NIST Boulder is working with the MEMS and Nanotechnology Exchange (MNX) to develop an Atomic MEMS process technology module for Chip Scale Atomic Devices (CSADs). Such devices are of continuing research interest as a key technology in a number of U.S. Defense Advanced Research Projects Agency (DARPA) programs and are being investigated for use in advanced frequency referencing, magnetometry and inertial sensing. The pursued module is designed to reduce development time and cost in CSAD research programs by providing a proven process to fabricate the elements commonly needed in most CSAD projects at the wafer level. The integrated platform provides thermal isolation, cell heating and electromagnetic control forming a ´smart´ package for miniature atomic vapor cells. This paper describes the design of the package made available through the MNX module. The device will able to thermally stabilize a vapor cell at 150°C with less than 5 mW of heater power. In addition, a system is currently under development at NIST Boulder designed to allow wafer-level, parallel fabrication of micromachined atomic vapor cells. The fabrication system will be suitable for use in the R&D fabrication facilities, such as those comprising the MNX network.
Keywords :
electromagnetism; magnetometers; micromechanical devices; nanotechnology; CSAD research programs; NIST Boulder; R&D fabrication facilities; U.S. Defense Advanced Research Projects Agency; atomic MEMS process technology module; cell heating; chip scale atomic devices; electromagnetic control; inertial sensing; instrumentation group; magnetometry; micromachined atomic vapor cells; nanotechnology exchange; parallel fabrication; thermal isolation;
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2010.5690546