DocumentCode :
2131970
Title :
Drain Temperature Dependence on Ambient Temperature for a Cryogenic Low Noise C-Band Amplifier
Author :
Muñoz, S. ; Gallego, J.D. ; Sebastián, J.L. ; Miranda, J.M.
Author_Institution :
Dpt. Fisica Aplicada III, Facultad de Ciencias Fisicas. U. C. M., 28040 Madrid ( Spain).
Volume :
1
fYear :
1997
fDate :
8-12 Sept. 1997
Firstpage :
114
Lastpage :
118
Abstract :
A comparison between predicted and measured noise temperatures for cryogenic HEMT amplifiers is presented by using the Pospieszalski´s noise model. A good agreement between predicted and measured amplifier´s noise performance is obtained both at room and cryogenic temperatures. However, the predicted values overestimate noise temperature in the center part of the measured temperature range (50K - 230K). A parabolic dependence for the drain temperature with ambient temperature is proposed to obtain a better fitting to the experimental results.
Keywords :
Circuit noise; Cryogenics; Extraterrestrial measurements; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Temperature dependence; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
Type :
conf
DOI :
10.1109/EUMA.1997.337780
Filename :
4138821
Link To Document :
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