Formation and characterizations of Porous 3C-SiC thin films for micro/nano systems

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200°C using the single-precursor hexamethyldisilane Si₂(CH₃)₆ (HMDS) as the Si and C precursors. 0~40 seem N₂ gas was used as the doping source. A porous structure was achieved using the anodization process with a 380 nm UV-LED. The anodization time and current density were fixed at 60 sec and 7.1 mA/cm², respectively. The thermal and mechanical properties of the N₂ doped 3C-SiC and the porous 3C-SiC were measured by resistance change with temperature and nano-indentation, respectively.