Dual-band power dividers using substrate integrated circular cavity

In this work, two types of novel dual-band power dividers using substrate integrated circular cavity are proposed. Dual-band response is achieved by TM₀₁₀ mode and TM₁₁₀ mode of the circular resonator. It has been investigated that the first designed power divider´s two center frequencies have a fixed frequency ratio of 1.59. Furthermore, substrate integrated circular cavity with two perturbation vias is introduced to expand the range of frequency ratio. The second type power divider using this new structure has a frequency ratio of 1.47. The simulated results show that these SICC dual-band power dividers have the merit of low insertion loss.