Characterisation of Schottky Diode Performance by Numerical Simulation Coupled with Harmonic Balance

Author

Grajal, J. ; Krozer, V. ; González, E. ; Gismero, J. ; Maldonado, F. ; Lin, C. ; Simon, A. ; Hartnagel, H.L.

Author_Institution

U.P. Madrid, ETSIT, Ciudad Universitaria s/n, 28040 Madrid, Spain. Phone: 34-1-3367358, fax: 34-1- 3367362, e-mail: jesus@gmr.ssr.upm.es

Volume

1

fYear

1997

fDate

8-12 Sept. 1997

Firstpage

190

Lastpage

195

Abstract

The electrical and RF performance characteristics of submillimetre-wave Schottky diodes are investigated using an accurate physical model which combines drift-diffusion current transport with thermionic and thermionicfield emission currents imposed at the Schottky contact. The model includes self-consistently image force effect, tunneling transport, and current dependent recombination velocity at the Schottky contact. This physical simulator has been coupled to a harmonic balance simulator as a non-linear element. The integrated device-circuit simulator has allowed to study in detail the limiting factors of varactor operation. The contribution of large-signal capacitance excitation is discussed. The influence of external loads at different harmonics, bias and power level is also analysed.

Keywords

Capacitance; Harmonic analysis; Numerical simulation; Power system harmonics; Radio frequency; Schottky barriers; Schottky diodes; Thermionic emission; Tunneling; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1997. 27th European

Conference_Location

Jerusalem, Israel

Type

conf

DOI

10.1109/EUMA.1997.337795

Filename

4138836