DocumentCode
2132413
Title
Development of an ac-dc thermal converter at millivolt level operating at cryogenic temperature
Author
Monticone, E. ; Pogliano, U. ; Lacquaniti, V. ; Serazio, D.
Author_Institution
Ist. Elettrotecnico Nazionale Galileo Ferraris, Torino, Italy
fYear
2000
fDate
14-19 May 2000
Firstpage
548
Lastpage
549
Abstract
A device for the measurements of ac-dc transfer difference at millivolt level is under development at IEN. In this device a Cr heater, Nb leads and a Nb transition edge thermometer have been deposited by evaporation on a silicon nitride (SiN) membrane. Analysis on the possible effects on the ac-dc transfer difference and first experimental tests show the possibility of high accuracy direct measurements at the level of 1 mV.
Keywords
low-temperature techniques; silicon compounds; stability; transfer standards; voltage measurement; 1 mV; 50 ohms; Cr; Cr heater; IEN; Nb; Nb leads; Nb transition edge thermometer; SiN; SiN membrane; ac-dc thermal converter; ac-dc transfer; cryogenic temperature; Analog-digital conversion; Biomembranes; Chromium; Cryogenics; Niobium; Silicon compounds; Superconducting device noise; Temperature; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location
Sydney, NSW, Australia
Print_ISBN
0-7803-5744-2
Type
conf
DOI
10.1109/CPEM.2000.851125
Filename
851125
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