Title :
Development of an ac-dc thermal converter at millivolt level operating at cryogenic temperature
Author :
Monticone, E. ; Pogliano, U. ; Lacquaniti, V. ; Serazio, D.
Author_Institution :
Ist. Elettrotecnico Nazionale Galileo Ferraris, Torino, Italy
Abstract :
A device for the measurements of ac-dc transfer difference at millivolt level is under development at IEN. In this device a Cr heater, Nb leads and a Nb transition edge thermometer have been deposited by evaporation on a silicon nitride (SiN) membrane. Analysis on the possible effects on the ac-dc transfer difference and first experimental tests show the possibility of high accuracy direct measurements at the level of 1 mV.
Keywords :
low-temperature techniques; silicon compounds; stability; transfer standards; voltage measurement; 1 mV; 50 ohms; Cr; Cr heater; IEN; Nb; Nb leads; Nb transition edge thermometer; SiN; SiN membrane; ac-dc thermal converter; ac-dc transfer; cryogenic temperature; Analog-digital conversion; Biomembranes; Chromium; Cryogenics; Niobium; Silicon compounds; Superconducting device noise; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location :
Sydney, NSW, Australia
Print_ISBN :
0-7803-5744-2
DOI :
10.1109/CPEM.2000.851125
