Title :
An improved physics-based nonquasi-static FET-model
Author :
Schmale, Ingo ; Kompa, Günter
Author_Institution :
D-34121 Kassel, Wilhelmshöher Allee 73, Fachgebiet Hochfrequenztechnik, University of Kassel, Germany. Tel: +49-561-804-6535, Fax: -6529, E-mail: ingo@hfm.e-technik.uni-kassel.de
Abstract :
This paper presents a novel large-signal model for MESFETs and HEMTs derived from the physics-based topology known from small-signal modelling. It is easy to extract, implement, and use, and gives very accurate results even for non-linear applications. The model contains nonquasi-static charge source formulations, and includes low-frequency dispersion. The validity of the concept is demonstrated in the analysis of a 12/24 GHz MMIC frequency doubler.
Keywords :
Circuit topology; Current measurement; Electronic mail; Equivalent circuits; Frequency; HEMTs; MESFETs; MODFETs; Parasitic capacitance; Physics;
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
DOI :
10.1109/EUMA.1997.337819
