• DocumentCode
    2133141
  • Title

    An improved physics-based nonquasi-static FET-model

  • Author

    Schmale, Ingo ; Kompa, Günter

  • Author_Institution
    D-34121 Kassel, Wilhelmshöher Allee 73, Fachgebiet Hochfrequenztechnik, University of Kassel, Germany. Tel: +49-561-804-6535, Fax: -6529, E-mail: ingo@hfm.e-technik.uni-kassel.de
  • Volume
    1
  • fYear
    1997
  • fDate
    8-12 Sept. 1997
  • Firstpage
    328
  • Lastpage
    330
  • Abstract
    This paper presents a novel large-signal model for MESFETs and HEMTs derived from the physics-based topology known from small-signal modelling. It is easy to extract, implement, and use, and gives very accurate results even for non-linear applications. The model contains nonquasi-static charge source formulations, and includes low-frequency dispersion. The validity of the concept is demonstrated in the analysis of a 12/24 GHz MMIC frequency doubler.
  • Keywords
    Circuit topology; Current measurement; Electronic mail; Equivalent circuits; Frequency; HEMTs; MESFETs; MODFETs; Parasitic capacitance; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1997. 27th European
  • Conference_Location
    Jerusalem, Israel
  • Type

    conf

  • DOI
    10.1109/EUMA.1997.337819
  • Filename
    4138860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2133141