DocumentCode :
2133399
Title :
Air Bridge Based Planar Hybrid Technology for Microwave and Millimeterwave Applications
Author :
Wasige, E. ; Kompa, G. ; van Raay, F. ; Schmale, I. ; Rangelow, I.W. ; Scholz, W. ; Shi, F. ; Kassing, R. ; Meyer, R. ; Amann, M.-C. ; Hudek, P.
Author_Institution :
University of Kassel, D-34121 Kassel, Wilhelmshöher Allee 73. Tel: +49-561-804 6364, Fax: +49-561-804 6529, E-mail: wasige@hfm.e-technik.uni-kassel.de
Volume :
1
fYear :
1997
fDate :
8-12 Sept. 1997
Firstpage :
375
Lastpage :
378
Abstract :
A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (e.g. GaAs FETs) are glued with an epoxy resin in openings micromachined in a high resistivity silicon substrate with a vertical precision of better than 2 ¿m and lateral tolerances less than 10 ¿m. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. Preliminary results show very promising high frequency properties of this assembly.
Keywords :
Bridges; Conductivity; Epoxy resins; Gallium arsenide; Microwave FETs; Microwave technology; Microwave transistors; Packaging; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
Type :
conf
DOI :
10.1109/EUMA.1997.337828
Filename :
4138869
Link To Document :
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