• DocumentCode
    2133399
  • Title

    Air Bridge Based Planar Hybrid Technology for Microwave and Millimeterwave Applications

  • Author

    Wasige, E. ; Kompa, G. ; van Raay, F. ; Schmale, I. ; Rangelow, I.W. ; Scholz, W. ; Shi, F. ; Kassing, R. ; Meyer, R. ; Amann, M.-C. ; Hudek, P.

  • Author_Institution
    University of Kassel, D-34121 Kassel, Wilhelmshöher Allee 73. Tel: +49-561-804 6364, Fax: +49-561-804 6529, E-mail: wasige@hfm.e-technik.uni-kassel.de
  • Volume
    1
  • fYear
    1997
  • fDate
    8-12 Sept. 1997
  • Firstpage
    375
  • Lastpage
    378
  • Abstract
    A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (e.g. GaAs FETs) are glued with an epoxy resin in openings micromachined in a high resistivity silicon substrate with a vertical precision of better than 2 ¿m and lateral tolerances less than 10 ¿m. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. Preliminary results show very promising high frequency properties of this assembly.
  • Keywords
    Bridges; Conductivity; Epoxy resins; Gallium arsenide; Microwave FETs; Microwave technology; Microwave transistors; Packaging; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1997. 27th European
  • Conference_Location
    Jerusalem, Israel
  • Type

    conf

  • DOI
    10.1109/EUMA.1997.337828
  • Filename
    4138869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2133399