Reliability of hybrid III-V on Si distributed feedback lasers

Author

SRINIVASAN, SUDARSHAN ; Bowers, John E.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

10

Lastpage

11

Abstract

This work reports a reliability study on fabricated hybrid Si distributed feedback lasers with a quarter-wave shifted cavity design. The influence on reliability of a superlattice between the lasing region and the bonded interface is investigated. Aging tests on DFB laser diodes on the hybrid Si platform have been conducted. The diodes with a superlattice showed no significant degradation in threshold current after 5000 hrs of aging even at 70 °C. 50% degradation in threshold current of some diodes at 70°C is estimated to take ~40000 hrs.

Keywords

III-V semiconductors; ageing; distributed feedback lasers; elemental semiconductors; indium compounds; laser cavity resonators; laser reliability; optical fabrication; optical testing; semiconductor lasers; semiconductor superlattices; silicon; DFB laser diodes; InP-Si; aging tests; fabricated hybrid silicon distributed feedback laser reliability; hybrid III-V; lasing region; quarter-wave shifted cavity design; superlattice; temperature 70 degC; threshold current; time 5000 hr; Aging; Distributed feedback devices; Indium phosphide; Reliability; Semiconductor lasers; Silicon; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Conference_Location

San Diego, CA

ISSN

0899-9406

Print_ISBN

978-1-4577-0828-2

Type

conf

DOI

10.1109/ISLC.2012.6348302

Filename

6348302