Title :
Reliability of hybrid III-V on Si distributed feedback lasers
Author :
SRINIVASAN, SUDARSHAN ; Bowers, John E.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
This work reports a reliability study on fabricated hybrid Si distributed feedback lasers with a quarter-wave shifted cavity design. The influence on reliability of a superlattice between the lasing region and the bonded interface is investigated. Aging tests on DFB laser diodes on the hybrid Si platform have been conducted. The diodes with a superlattice showed no significant degradation in threshold current after 5000 hrs of aging even at 70 °C. 50% degradation in threshold current of some diodes at 70°C is estimated to take ~40000 hrs.
Keywords :
III-V semiconductors; ageing; distributed feedback lasers; elemental semiconductors; indium compounds; laser cavity resonators; laser reliability; optical fabrication; optical testing; semiconductor lasers; semiconductor superlattices; silicon; DFB laser diodes; InP-Si; aging tests; fabricated hybrid silicon distributed feedback laser reliability; hybrid III-V; lasing region; quarter-wave shifted cavity design; superlattice; temperature 70 degC; threshold current; time 5000 hr; Aging; Distributed feedback devices; Indium phosphide; Reliability; Semiconductor lasers; Silicon; Threshold current;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348302
