Title :
Theory of laser gain in a Ge-on-Si laser
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A theory is developed for the gain versus injected current density under different tensile strains and doping densities. Many-body effects are included to account for energy renormalization modifications to the impact of n-doping.
Keywords :
current density; doping profiles; elemental semiconductors; germanium; integrated optics; renormalisation; semiconductor doping; semiconductor lasers; silicon; tensile strength; Ge-Si; Ge-on-Si laser; doping density; energy renormalization modifications; injected current density; laser gain; many-body effects; n-doping; tensile strains; Charge carrier density; Current density; Doping; Solids; Tensile strain; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348303
