• DocumentCode
    2134179
  • Title

    Theory of laser gain in a Ge-on-Si laser

  • Author

    Chow, W.W.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    A theory is developed for the gain versus injected current density under different tensile strains and doping densities. Many-body effects are included to account for energy renormalization modifications to the impact of n-doping.
  • Keywords
    current density; doping profiles; elemental semiconductors; germanium; integrated optics; renormalisation; semiconductor doping; semiconductor lasers; silicon; tensile strength; Ge-Si; Ge-on-Si laser; doping density; energy renormalization modifications; injected current density; laser gain; many-body effects; n-doping; tensile strains; Charge carrier density; Current density; Doping; Solids; Tensile strain; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4577-0828-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2012.6348303
  • Filename
    6348303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2134179