DocumentCode :
2134272
Title :
Sub-kHz linewidth GaSb semiconductor diode lasers operating near 2 μm
Author :
Bagheri, Mahmood ; Briggs, Ryan M. ; Frez, Clifford ; Ksendzov, Alexander ; Forouhar, Siamak
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
2012
fDate :
7-10 Oct. 2012
Firstpage :
20
Lastpage :
21
Abstract :
We report on the phase noise properties of DFB lasers operating near 2.0 μm. Measured noise spectra indicate intrinsic linewidths below 1 kHz. Less than 200 kHz effective linewidth is estimated for 5 ms measurement time.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; laser noise; phase noise; quantum well lasers; spectral line breadth; DFB lasers; GaSb; measurement time; noise spectra; phase noise properties; subkHz linewidth semiconductor diode lasers; time 5 ms; Gas lasers; Laser modes; Laser noise; Measurement by laser beam; Power lasers; Semiconductor device measurement; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
ISSN :
0899-9406
Print_ISBN :
978-1-4577-0828-2
Type :
conf
DOI :
10.1109/ISLC.2012.6348307
Filename :
6348307
Link To Document :
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