Title :
Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions
Author :
Sprengel, Stephan ; Vizbaras, Kristijonas ; Andrejew, Alexander ; Gruendl, Tobias ; Geiger, Kathrin ; Boehm, Gerhard ; Grasse, Christian ; Amann, Markus-Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
Abstract :
We present a new concept for type-II lasers on InP, utilizing W-shaped GaAsSb/GaInAs active regions. First lasers demonstrate emission at 2.55μm up to 42°C in pulsed mode and continuous operation at 2.31μm up to 0°C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; quantum well lasers; semiconductor quantum wells; InP-GaAsSb-GaInAs; W-shaped active regions; continuous operation; lasing wavelength; pulsed mode; type-II active regions; type-II lasers; wavelength 2.31 mum; wavelength 2.55 mum; Charge carrier processes; Gas lasers; Indium phosphide; Laser modes; Quantum well lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348308
