• DocumentCode
    2134286
  • Title

    Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

  • Author

    Sprengel, Stephan ; Vizbaras, Kristijonas ; Andrejew, Alexander ; Gruendl, Tobias ; Geiger, Kathrin ; Boehm, Gerhard ; Grasse, Christian ; Amann, Markus-Christian

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    We present a new concept for type-II lasers on InP, utilizing W-shaped GaAsSb/GaInAs active regions. First lasers demonstrate emission at 2.55μm up to 42°C in pulsed mode and continuous operation at 2.31μm up to 0°C.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; quantum well lasers; semiconductor quantum wells; InP-GaAsSb-GaInAs; W-shaped active regions; continuous operation; lasing wavelength; pulsed mode; type-II active regions; type-II lasers; wavelength 2.31 mum; wavelength 2.55 mum; Charge carrier processes; Gas lasers; Indium phosphide; Laser modes; Quantum well lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4577-0828-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2012.6348308
  • Filename
    6348308