Title :
Drain avalanche hot hole injection mode on PMOSFETs
Author :
Matsuoka, F. ; Hayashida, H. ; Hama, K. ; Toyoshima, Y. ; Iwai, H. ; Maeguchi, K.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Hot carrier degradation was studied for surface-channel (p/sup +/ polysilicon-gate) PMOSFETs in comparison with buried-channel (n/sup +/ polysilicon-gate) PMOSFETs. In the shallow gate bias region, a carrier degradation mode by drain avalanche hot-hole injection was found for the surface-channel PMOSFETs. Here, trapped holes and interface state generation, which were not observed in the buried-channel PMOSFETs, were detected. In the deep-gate-bias region, a channel hot-hole interface-state-generation mode without the threshold voltage shift was found for both types of PMOSFETs studied.<>
Keywords :
hot carriers; insulated gate field effect transistors; PMOSFETs; buried-channel; carrier degradation mode; channel hot-hole interface-state-generation mode; deep-gate-bias region; drain avalanche hot-hole injection; interface state generation; n/sup +/ polycrystalline Si; p/sup +/ polycrystalline Si-SiO/sub 2/; shallow gate bias region; surface-channel; threshold voltage shift; trapped holes; Boron; Current measurement; Degradation; Electron traps; Hot carriers; Interface states; MOSFETs; Secondary generated hot electron injection; Stress; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32739
