DocumentCode
2134724
Title
Widely tunable, polarization stable BCB MEMS VCSELs with SWG integration based on InP at 1.55 μm
Author
Gruendl, T. ; Zogal, K. ; Debernardi, P. ; Grasse, C. ; Geiger, K. ; Boehm, G. ; Meyer, R. ; Amann, M.-C. ; Meissner, P. ; Kueppers, F.
Author_Institution
Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
42
Lastpage
43
Abstract
Polarization stable MEMS VCSEL devices based on InP with SWG are presented. They show tuning ranges of 23nm, 1mW optical output power, Ith of 3mA and a polarization suppression ratio around 20dB.
Keywords
Bragg gratings; III-V semiconductors; indium compounds; integrated optics; laser tuning; light polarisation; micro-optomechanical devices; quantum well lasers; surface emitting lasers; InP; SWG integration; current 3 mA; optical output power; polarization suppression ratio; power 1 mW; subwavelength-grating; tunable polarization stable BCB MEMS VCSEL device; vertical-cavity surface-emitting lasers; wavelength 1.55 mum; Fiber lasers; Gallium arsenide; Indium phosphide; Measurement by laser beam; Micromechanical devices; Tuning; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348325
Filename
6348325
Link To Document