DocumentCode
2134777
Title
High-power and high-efficiency 915 nm broad-area laser diodes with window structure
Author
Morita, Takenori ; Nagakura, Takehito ; Torii, Kousuke ; Takauji, Motoki ; Maeda, Junya ; Miyamoto, Masahiro ; Miyajima, Hirofumi ; Yoshida, Harumasa
Author_Institution
Hamamatsu Photonics K. K., Hamamatsu, Japan
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
46
Lastpage
47
Abstract
This paper presents high-power high-efficiency 915 nm broad-area laser diodes with the window structure fabricated using optimized impurity-free vacancy disordering (IFVD) process.
Keywords
optical fabrication; optical windows; quantum well lasers; high-power high-efficiency broad-area laser diodes; impurity-free vacancy disordering process; optimized IFVD process; wavelength 915 nm; window structure; Diode lasers; Fiber lasers; Laser excitation; Optical fiber devices; Optical fibers; Power generation; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348327
Filename
6348327
Link To Document