Title :
High reliability 1.3-μm buried heterostructure AlGaInAs-MQW DFB laser operated at 28-Gbit/s direct modulation
Author :
Yamasaki, Yasuo ; Kaida, Noriaki ; Takeuchi, Tatsuya ; Hasegawa, Taro ; Okada, Nobumasa ; Akiyama, Kan ; Chifune, Gaishi ; Onishi, Yutaka ; Uesaka, Katsumi ; Ikoma, Nobuyuki ; Fujii, Takuya ; Nakabayashi, Takashi
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama, Japan
Abstract :
Clear eye opening at 28-Gbit/s direct modulation up to 75°C is achieved with 1.3-μm buried heterostructure AlGaInAs-MQW DFB laser. No failure had occurred at high optical output power aging test over 7000 hours.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; laser reliability; laser transitions; optical fibre communication; optical modulation; optical transmitters; quantum well lasers; AlGaInAs; bit rate 28 Gbit/s; buried heterostructure-MQW DFB laser; clear eye opening; direct modulation; laser reliability; power aging test; wavelength 1.3 mum; High speed optical techniques; Modulation; Optical fibers; Power generation; Power lasers; Reliability;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348330
