• DocumentCode
    2134947
  • Title

    1.3-μm-range InGaAs metamorphic laser for low power consumption operation

  • Author

    Arai, Masakazu ; Kobayashi, Wataru ; Kohtoku, Masaki

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    We demonstrated a 1.3-μm-range metamorphic short cavity laser with a high characteristic temperature (T0=200K). The bias current for 10-Gbps modulation at high temperature was reduced and we revealed the potential for low-power consumption operation.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical modulation; optical transmitters; quantum well lasers; thermo-optical devices; InGaAs; bias current; bit rate 10 Gbit/s; characteristic temperature; low power consumption operation; metamorphic short cavity laser; temperature 200 K; wavelength 1.3 mum; Gallium arsenide; Indium gallium arsenide; Power lasers; Substrates; Temperature; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4577-0828-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2012.6348334
  • Filename
    6348334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2134947