DocumentCode
2134971
Title
700nm InP quantum dot lasers with strained confinement layers
Author
Elliott, Stella N. ; Smowton, Peter M. ; Krysa, Andrey B.
Author_Institution
Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
62
Lastpage
63
Abstract
InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm-2 and 250Acm-2 at 20° C and 80° C respectively are produced by reducing carrier population and recombination through strain engineering.
Keywords
III-V semiconductors; current density; electron-hole recombination; indium compounds; quantum dot lasers; InP; carrier population; carrier recombination; quantum dot lasers; size 2 mm; strain engineering; strained confinement layers; temperature 20 degC; temperature 80 degC; threshold current density; uncoated facet lasers; wavelength 700 nm; Current measurement; Indium phosphide; Quantum dot lasers; Sociology; Temperature measurement; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348335
Filename
6348335
Link To Document