DocumentCode
2135031
Title
110 °C operation of monolithic quantum dot passively mode-locked lasers
Author
Mee, J.K. ; Crowley, M.T. ; Patel, N. ; Murrell, D. ; Raghunathan, R. ; Aboketaf, A. ; Elshaari, A. ; Preble, S.F. ; Ampadu, P. ; Lester, L.F.
Author_Institution
AFRL/RVSE, Kirtland AFB, NM, USA
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
68
Lastpage
69
Abstract
Record performance over temperature is reported in a two-section InAs/GaAs quantum dot passively mode-locked laser. Stable pulses with less than 18 ps full-width-half-max are observed from 20-110 °C.
Keywords
III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; laser mode locking; laser stability; quantum dot lasers; InAs-GaAs; excited state operation; ground state operation; monolithic quantum dot passively mode locked lasers; stable pulses; temperature 20 degC to 110 degC; Optical filters; Optical pulses; Optical ring resonators; Optical transmitters; Quantum dot lasers; Temperature measurement; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348338
Filename
6348338
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