Title :
Achieving temperature-insensitive λ in InP quantum dot lasers
Author :
Shutts, S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
By characterizing the temperature dependence of gain peak wavelength we designed Edge-emitting lasers to minimise the temperature dependence of the emission wavelength to as low as 0.03 nm/K, between 7 and 107°C (280-380 K).
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; quantum dot lasers; surface emitting lasers; InP; edge-emitting lasers; emission wavelength; gain peak wavelength; quantum dot lasers; temperature 7 degC to 107 degC; temperature dependence; temperature-insensitivity; Cavity resonators; Measurement by laser beam; Photonic band gap; Quantum dot lasers; Temperature dependence; Temperature measurement;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348343
