Title :
High threshold modal gain based on highly stacked InGaAs quantum dot laser diode
Author :
Tanoue, F. ; Sugawara, H. ; Akahane, K. ; Yamamoto, N.
Author_Institution :
Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Hino, Japan
Abstract :
A threshold modal gain of up to 103 cm-1 was observed for 19-stacked InGaAs quantum dot (QD) laser diodes with a high QD volume density.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; 19-stacked quantum dot laser diodes; InGaAs; high QD volume density; highly stacked quantum dot laser diode; threshold modal gain; Cavity resonators; Diode lasers; Indium gallium arsenide; Measurement by laser beam; Molecular beam epitaxial growth; Quantum dot lasers; high modal gain; high volume density; quantum dot laser;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348345
