An accurate model of subbreakdown due to band-to-band tunneling and its application

Author

Shirota, R. ; Endoh, T. ; Momodomi, M. ; Nakayama, R. ; Inoue, S. ; Kirisawa, R. ; Masuoka, F.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

26

Lastpage

29

Abstract

The authors describe a novel accurate model and numerical analysis of subbreakdown phenomena due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Subbreakdown I-V characteristics are calculated for various oxide thicknesses. The results agree with experimental results over a wide range of subbreakdown current from 10/sup -12/ A to 10/sup -6/ A. The numerical analysis based on this model has been utilized to suppress the subbreakdown current. It is concluded that the model can be utilized for the design of thin-gate-oxide devices.<>

Keywords

dielectric thin films; insulated gate field effect transistors; semiconductor device models; 1 pA to 1 muA; I-V characteristics; band-to-band tunneling; design of thin-gate-oxide devices; experimental results; model of subbreakdown; numerical analysis; oxide thicknesses; subbreakdown current; subbreakdown phenomena; thin-gate-oxide n-MOSFET; Electric breakdown; Electrons; Impurities; MOS devices; MOSFET circuits; Numerical analysis; Numerical models; Tunneling; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32741

Filename

32741