Title :
An accurate model of subbreakdown due to band-to-band tunneling and its application
Author :
Shirota, R. ; Endoh, T. ; Momodomi, M. ; Nakayama, R. ; Inoue, S. ; Kirisawa, R. ; Masuoka, F.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The authors describe a novel accurate model and numerical analysis of subbreakdown phenomena due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Subbreakdown I-V characteristics are calculated for various oxide thicknesses. The results agree with experimental results over a wide range of subbreakdown current from 10/sup -12/ A to 10/sup -6/ A. The numerical analysis based on this model has been utilized to suppress the subbreakdown current. It is concluded that the model can be utilized for the design of thin-gate-oxide devices.<>
Keywords :
dielectric thin films; insulated gate field effect transistors; semiconductor device models; 1 pA to 1 muA; I-V characteristics; band-to-band tunneling; design of thin-gate-oxide devices; experimental results; model of subbreakdown; numerical analysis; oxide thicknesses; subbreakdown current; subbreakdown phenomena; thin-gate-oxide n-MOSFET; Electric breakdown; Electrons; Impurities; MOS devices; MOSFET circuits; Numerical analysis; Numerical models; Tunneling; Ultra large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32741
