Title :
Modulation bandwidth of GaInAsP/InP lateral-current-injection membrane laser
Author :
Shindo, Takahiko ; Futami, Mitsuaki ; Doi, Kyohei ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
A direct modulation bandwidth of GaInAsP/InP lateral-current-injection membrane DFB laser was theoretically investigated. It was found that 10 Gb/s modulation can be obtained at low driving current of 1 mA by adopting narrow stripe width.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical modulation; quantum well lasers; GaInAsP-InP; bit rate 10 Gbit/s; current 1 mA; direct modulation bandwidth; driving current; lateral-current-injection membrane DFB laser; narrow stripe width; Bandwidth; Delay; Laser feedback; Modulation; Semiconductor lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348350
