Compact thermal model for HBT devices

Author

Burton, Richard ; Vijayakumar, Bhuvaneshwaran

Author_Institution

Skyworks Solutions Inc., Irvine, CA

fYear

2006

fDate

May 30 2006-June 2 2006

Firstpage

653

Lastpage

659

Abstract

A compact thermal model has been developed to accurately (within 5%) predict the thermal resistance of HBT arrays. The HBT power sources are modeled as spherical heat sources. The temperature distribution and hence the thermal resistance of a single device is modeled first. Method of translation that takes advantage of the linearity of the heat transfer equation is then used to calculate the temperature distribution of an array of devices. The compact model is valid for the typical ranges of die attach thickness and thermal conductivity used. The method has been validated using finite element simulations. The accuracy of the model is also verified using experimental results presented. InGaP/GaAs based HBTs were used for measurements

Keywords

III-V semiconductors; finite element analysis; gallium arsenide; gallium compounds; heat transfer; heterojunction bipolar transistors; indium compounds; semiconductor device models; temperature distribution; thermal conductivity; thermal resistance; HBT devices; HBT power sources; InGaP-GaAs; compact thermal model; die attach thickness; finite element simulations; heat transfer equation; heterojunction bipolar transistors; spherical heat sources; temperature distribution; thermal conductivity; thermal resistance; Equations; Finite element methods; Heat transfer; Heterojunction bipolar transistors; Linearity; Microassembly; Predictive models; Temperature distribution; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal and Thermomechanical Phenomena in Electronics Systems, 2006. ITHERM '06. The Tenth Intersociety Conference on

Conference_Location

San Diego, CA

ISSN

1087-9870

Print_ISBN

0-7803-9524-7

Type

conf

DOI

10.1109/ITHERM.2006.1645407

Filename

1645407