Catastrophic optical bulk damage (COBD) — A new degradation mode in high power InGaAs-AlGaAs strained QW lasers

Author

Sin, Yongkun ; Presser, Nathan ; LaLumondiere, Stephen ; Ives, Neal ; Lotshaw, William ; Moss, Steven C.

Author_Institution

Electron. & Photonics Lab., Aerosp. Corp., El Segundo, CA, USA

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

116

Lastpage

117

Abstract

We investigated degradation mechanisms responsible for catastrophic optical bulk damage (COBD) in high-power multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers with windowed n-contacts using TR-EL, DLTS, EBIC, and TR-PL techniques.

Keywords

III-V semiconductors; aluminium compounds; deep level transient spectroscopy; electroluminescence; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; DLTS techniques; EBIC techniques; InGaAs-AlGaAs; TR-EL techniques; TR-PL techniques; catastrophic optical bulk damage; deep level transient spectroscopy; degradation mode; electron beam induced current; high power InGaAs-AlGaAs strained QW lasers; multimode InGaAs-AlGaAs strained quantum well lasers; time-resolved electroluminescence; time-resolved photoluminescence; windowed n-contacts; Degradation; Laser excitation; Measurement by laser beam; Optical imaging; Power lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Conference_Location

San Diego, CA

ISSN

0899-9406

Print_ISBN

978-1-4577-0828-2

Type

conf

DOI

10.1109/ISLC.2012.6348356

Filename

6348356