Title :
Catastrophic optical bulk damage (COBD) — A new degradation mode in high power InGaAs-AlGaAs strained QW lasers
Author :
Sin, Yongkun ; Presser, Nathan ; LaLumondiere, Stephen ; Ives, Neal ; Lotshaw, William ; Moss, Steven C.
Author_Institution :
Electron. & Photonics Lab., Aerosp. Corp., El Segundo, CA, USA
Abstract :
We investigated degradation mechanisms responsible for catastrophic optical bulk damage (COBD) in high-power multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers with windowed n-contacts using TR-EL, DLTS, EBIC, and TR-PL techniques.
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; electroluminescence; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; DLTS techniques; EBIC techniques; InGaAs-AlGaAs; TR-EL techniques; TR-PL techniques; catastrophic optical bulk damage; deep level transient spectroscopy; degradation mode; electron beam induced current; high power InGaAs-AlGaAs strained QW lasers; multimode InGaAs-AlGaAs strained quantum well lasers; time-resolved electroluminescence; time-resolved photoluminescence; windowed n-contacts; Degradation; Laser excitation; Measurement by laser beam; Optical imaging; Power lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348356
