Title :
Electron beam damage of advanced silicon bipolar transistors and circuits
Author :
Jenkins, K.A. ; Cressler, J.D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The effect of the irradiation of modern bipolar transistors with energetic electrons (5 to 30 keV) is investigated. The range of energies corresponds to those used for electron-beam lithography and testing. The transistors used for this study were deep-trench-isolated self-aligned, double-polysilicon, n-p-n bipolar transistors, processed with one level of metal. The physical mechanism is described and dose-energy sensitivities are established. The requirements for annealing the damage are determined.<>
Keywords :
bipolar integrated circuits; bipolar transistors; electron beam effects; electron beam lithography; elemental semiconductors; semiconductor device testing; silicon; 5 to 30 keV; deep-trench-isolated; dose-energy sensitivities; electron beam testing; electron-beam lithography; n-p-n bipolar transistors; physical mechanism; polycrystalline Si; requirements for annealing; self-aligned; semiconductors; Annealing; Bipolar transistors; Circuits; Current measurement; Degradation; Electron beams; Isolation technology; Lithography; Silicon; Testing;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32742
