Title :
Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers
Author :
Kulkova, Irina V. ; Larsson, David ; Semenova, Elizaveta S. ; Yvind, Kresten
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; optical design techniques; optical fabrication; optical modulation; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wells; InAlGaAsP-InP; MQW electroabsorber modulator; high-quality butt-joint interfaces; monolithic passively-mode-locked lasers; optical design method; optical fabrication; quantum well semiconductor optical amplifier; wavelength 1.55 mum; Indium phosphide; Laser mode locking; Masers; Quantum well devices; Semiconductor optical amplifiers; Mode-locked lasers; selective area growth; semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348364
