DocumentCode
2135699
Title
Semiconductor optical amplifiers operated as modulators with high extinction
Author
Ackley, Donald E. ; Connolly, John C. ; Guenther, Harald
Author_Institution
Innovative Photonics Solutions, Monmouth Junction, NJ, USA
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
135
Lastpage
136
Abstract
Semiconductor optical amplifiers (SOAs) have been demonstrated which operate as modulators at 780/808 nm with high output powers, excellent extinction, and narrow linewidths. Using an ECL laser as a seed laser in a MOPA configuration, extinction ratios >;30 dB were observed. By utilizing both a reverse bias to improve the extinction ratio and pulsed forward drive to modulate the amplifier, output powers of >;10 mW were demonstrated at high extinction.
Keywords
laser cavity resonators; optical modulation; semiconductor optical amplifiers; ECL laser; MOPA configuration; SOA; external cavity laser; extinction ratio; linewidths; modulators; output power; pulsed forward drive; seed laser; semiconductor optical amplifiers; wavelength 780 nm; wavelength 808 nm; Extinction ratio; Modulation; Optical fiber amplifiers; Power amplifiers; Power generation; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348365
Filename
6348365
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