Dual material gate-graded channel-gate stack (DMG-GC-Stack) surrounding gate MOSFET: Analytical threshold voltage (VTH) and subthreshold swing (S) models

Author

Aouaj, Abdellah ; Bouziane, Ahmed ; Nouaçry, Ahmed

Author_Institution

Lab. de Phys. de la Mater. et Nanotechnol. (LPMN), Univ. Sultan Moulay Slimane, Beni Mellal, Morocco

fYear

2011

fDate

7-9 April 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding gate (SG) MOSFET by combining Dual-Gate-Material, Graded-Channel and Gate Stack. By comparison with published results, it is shown that the new MOSFET structure can improve the immunity of CMOS-based devices in the nanoscale regime against short channel effect.

Keywords

CMOS integrated circuits; MOSFET; CMOS-based devices; DMG-GC-Stack SG MOSFET; DMG-GC-Stack surrounding gate MOSFET; analytical threshold voltage model; dual material gate-graded channel-gate stack; nanoscale regime; subthreshold swing model; surface potential; Analytical models; Electric potential; Logic gates; MOSFET circuits; Silicon; Threshold voltage; Dual material gate; Gate stack; Graded channel; Short channel effects; Surrounding gate MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Computing and Systems (ICMCS), 2011 International Conference on

Conference_Location

Ouarzazate

ISSN

Pending

Print_ISBN

978-1-61284-730-6

Type

conf

DOI

10.1109/ICMCS.2011.5945711

Filename

5945711